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首页> 外文期刊>Data in Brief >Directly grown two dimensional In 2S 3 nanoflakes via one-step solvothermal method: Material properties on In 2S 3 and performance data for supercapacitors
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Directly grown two dimensional In 2S 3 nanoflakes via one-step solvothermal method: Material properties on In 2S 3 and performance data for supercapacitors

机译: 2> 2 S 3 纳米薄膜通过一步溶液方法:材料特性在 2 S 3 以及超级电容器的性能数据

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摘要

Herein, the material structural properties such as phase, morphology, chemical composition, and surface area for In2S3nanoflakes, synthesized by a one-step solvothermal method, are studied [1]. The comparative electrochemical performance data of indium based electrode material is presented to establish the practical suitability of prepared In2S3electrode material. Device demonstration of fabricated solid-state supercapacitor device on different time frames set performance level demonstration of current work and suggest a potential candidate for next-generation energy storage electrode material.
机译:在此,研究了通过单步溶液方法合成的In2S3Nanoflaker的相,形态,化学组成和表面积的材料结构性质[1]。提出了基于铟基电极材料的比较电化学性能数据,以确定In2S3电极材料的实用适用性。在不同时间框架上制造的固态超级电容器装置的设备演示设置了当前工作的性能水平演示,并提出了下一代储能电极材料的潜在候选者。

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