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Imaging quantum spin Hall edges in monolayer WTe2

机译:Monolayer WTE2的成像量子旋转厅边缘

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摘要

A two-dimensional (2D) topological insulator exhibits the quantum spin Hall (QSH) effect, in which topologically protected conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported in an atomically thin material, monolayer WTesub2/sub. Here, we directly image the local conductivity of monolayer WTesub2/sub using microwave impedance microscopy, establishing beyond doubt that conduction is indeed strongly localized to the physical edges at temperatures up to 77 K and above. The edge conductivity shows no gap as a function of gate voltage, and is suppressed by magnetic field as expected. We observe additional conducting features which can be explained by edge states following boundaries between topologically trivial and nontrivial regions. These observations will be critical for interpreting and improving the properties of devices incorporating WTesub2/sub. Meanwhile, they reveal the robustness of the QSH channels and the potential to engineer them in the monolayer material platform.
机译:二维(2D)拓扑绝缘体表现出量子旋转霍尔(QSH)效应,其中存在于样品边缘处存在拓扑保护的导通通道。最近在原子薄材料中报道了QSH效应的实验签名,单层WTE 2 。这里,我们使用微波阻抗显微镜直接以单层WTE 2 的局部电导率进行图像,建立超出疑问,导通确实在高达77k及以上的温度下强烈地定位到物理边缘。边缘电导率显示为栅极电压的函数的间隙,并且由预期抑制磁场。我们遵守额外的导电特征,该传导功能可以在拓扑上微不足道和非活动区域之间的边界之后通过边缘状态解释。这些观察对于解释和改善包含WTE 2 的器件的性质至关重要。同时,它们揭示了QSH频道的稳健性以及在单层材料平台中工程师的潜力。

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