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首页> 外文期刊>Results in Physics >Na 1/3Ca 1/3Bi 1/3Cu 3Ti 4O 12–Ni@NiO/poly(vinylidene fluoride): Three–phase polymer composites with high dielectric permittivity and low loss tangent
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Na 1/3Ca 1/3Bi 1/3Cu 3Ti 4O 12–Ni@NiO/poly(vinylidene fluoride): Three–phase polymer composites with high dielectric permittivity and low loss tangent

机译:na 1/3 ca 1/3 bi 1/3 3 TI 4 O 12 NIO / POLY(偏二氟乙烯):具有高介电学漏血和损失切线的三相聚合物复合材料

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摘要

High permittivity and low loss tangent polymer matrix composites containing a low loading of filler are desirable for practical applications in modern electronic devices. In this work, greatly improved dielectric properties of poly(vinylidene fluoride) (PVDF) were accomplished by incorporating high–permittivity Na1/3Ca1/3Bi1/3Cu3Ti4O12(NCBCTO) ceramic particles with sizes of ~0.5–1.5?μm coupled with ~1.0–2.0?μm diameter core–shell Ni@NiO particles. Phase composition, crystal structures, morphology, microstructure, and dielectric properties of NCBCTO–Ni Ni@NiO/PVDF composites were investigated. A nonpolar α–phase and polar β– and γ–phases were detected in the PVDF matrix and NCBCTO–Ni/PVDF composites. Random dispersions of small clusters of NCBCTO and Ni particles were observed in the PVDF polymer matrix. Significantly enhanced dielectric permittivity, ≈279, which was higher than that of pure PVDF polymer by a factor of ≈27, was achieved. Surprisingly, the dielectric loss tangent was suppressed to a very low value of ≈0.07 at 1?kHz. The dielectric properties of the NCBCTO-Ni@NiO/PVDF composites are discussed based on the interfacial polarization at the internal interfaces.
机译:含有低负荷填料的高介电常数和低损损失正方形基质复合材料对于现代电子设备中的实际应用是期望的。在这项工作中,通过掺入高介电常数Na1 / 3ca1 / 3bi1 / 3cu3 -3bi1 / 3cu3ti4o12(ncbcto)含有尺寸的〜0.5-1.5Ωμm的高介电常数Na1 / 3ca1 / 3bi1 / 3cu3 -1 / 3bi1 / 3cu3 -13bi1 / 3cu3ti4o12(ncbcto)陶瓷颗粒来实现大大提高了聚(偏二氟乙烯)(pvdf)的介电性质。 2.0?μm直径核心壳Ni @ NiO颗粒。研究了NCBCTO-Ni Ni @ NiO / PVDF复合材料的相组成,晶体结构,形态,微观结构和介电性能。在PVDF基质和NCBCTO-Ni / PVDF复合材料中检测非极性α-相和极性β-和γ相。在PVDF聚合物基质中观察到NCBCTO和Ni颗粒小簇的随机分散体。实现了显着增强的介电介电常数,≈279较高于纯PVDF聚合物的介电常例27的介电常例27。令人惊讶的是,介电损耗切线被抑制到1?KHz的≈0.07的非常低的值。基于内部接口处的界面偏振来讨论NCBCTO-NI @ NIO / PVDF复合材料的电介质特性。

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