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Weighted Synapses Without Carry Operations for RRAM-Based Neuromorphic Systems

机译:无需携带基于RRAM的神经形态系统的加权突触

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The parallel updating scheme of RRAM-based analog neuromorphic systems based on sign stochastic gradient descent (SGD) can dramatically accelerate the training of neural networks. However, sign SGD can decrease accuracy. Also, some non-ideal factors of RRAM devices, such as intrinsic variations and the quantity of intermediate states, may significantly damage their convergence. In this paper, we analyzed the effects of these issues on the parallel updating scheme and found that it performed poorly on the task of MNIST recognition when the number of intermediate states was limited or the variation was too large. Thus, we propose a weighted synapse method to optimize the parallel updating scheme. Weighted synapses consist of major and minor synapses with different gain factors. Such a method can be widely used in RRAM-based analog neuromorphic systems to increase the number of equivalent intermediate states exponentially. The proposed method also generates a more suitable Δ W , diminishing the distortion caused by sign SGD. Unlike when several RRAM cells are combined to achieve higher resolution, there are no carry operations for weighted synapses, even if a saturation on the minor synapses occurs. The proposed method also simplifies the circuit overhead, rendering it highly suitable to the parallel updating scheme. With the aid of weighted synapses, convergence is highly optimized, and the error rate decreases significantly. Weighted synapses are also robust against the intrinsic variations of RRAM devices.
机译:基于符号随机梯度下降(SGD)的RRAM的基于模拟神经晶体系统的并行更新方案可以大大加速神经网络的训练。但是,Sign SGD可以降低精度。此外,RRAM器件的一些非理想因素,例如内在变化和中间状态的数量,可能会显着损害它们的收敛性。在本文中,我们分析了这些问题对并行更新方案的影响,发现当中间状态的数量有限或变化太大时,它对Mnist识别的任务进行了不佳。因此,我们提出了一种加权突触方法来优化并行更新方案。加权突触包括具有不同增益因子的主要和次要突触。这种方法可以广泛用于基于RRAM的模拟神经形态系统,以指数增加等同的中间状态的数量。所提出的方法还产生更合适的ΔW,减少由符号SGD引起的失真。与多个RRAM单元组合以实现更高分辨率时,即使发生在次要突触上的饱和度,也没有对加权突触的携带操作。所提出的方法还简化了电路开销,使其非常适合于并行更新方案。借助加权突触,收敛性高度优化,错误率显着降低。加权突触对RRAM设备的内在变体也是强大的。

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