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Multi-level pinning problems for random walks and self-avoiding lattice paths

机译:随机散步的多级钉扎问题和自我避免的晶格路径

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We consider a generalization of the classical pinning problem for integer-valued random walks conditioned to stay non-negative. More specifically, we take pinning potentials of the form $sum_{jgeq 0}epsilon_j N_j$, where $N_j$ is the number of visits to the state $j$ and ${epsilon_j}$ is a non-negative sequence. Partly motivated by similar problems for low-temperature contour models in statistical physics, we aim at finding a sharp characterization of the threshold of the wetting transition, especially in the regime where the variance $sigma^2$ of the single step of the random walk is small. Our main result says that, for natural choices of the pinning sequence ${epsilon_j}$, localization (respectively delocalization) occurs if $sigma^{-2}sum_{ jgeq0}(j+1)epsilon_jgeqdelta^{-1}$ (respectively $le delta$), for some universal $delta 0$ a large enough parameter. This generalization is directly relevant for applications to the above mentioned contour models.
机译:我们考虑对整数随机散步的古典循环问题的概括,以保持非负面。更具体地说,我们采取了FORM $ SUM_ {J GEQ 0} EPSILON_J N_J $的固定电位,其中$ N_J $是对州$ j $和$ { epsilon_j } $的访问数非负序列。部分激励了统计物理中低温轮廓模型的类似问题,我们的目标是寻找润湿过渡的阈值的尖锐表征,尤其是在方差$ sigma ^ 2美元的方案中随机的单一步骤步行很小。我们的主要结果表明,对于inning序列$ { epsilon_j } $的自然选择,如果$ sigma ^ {-2} sum_ {j geq0}(j + 1) epsilon_j geq delta ^ { - 1} $(分别为$ le delta $),用于某些通用$ delta 0 $足够大的参数。该概括与上述轮廓模型的应用直接相关。

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