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Presheath-sheath coupling for kinetic trajectory simulation of a magnetized plasma sheath

机译:用于磁化等离子体护套的动力学轨迹仿真的PreSheath-Sheath联轴器

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The coupling of presheath-sheath parameters is extended for the study of magnetized plasma sheath using the kinetic trajectory simulation (KTS) method, in which the final self-consistent states are obtained iteratively by solving the kinetic equations. In our case, it is assumed that the ion and electron velocity distribution functions are cut-off Maxwellians at the sheath entrance. The results show that the cut-off and Maxwellian maximum velocities have equal magnitudes at the sheath entrance and at wall. The presheath electron temperature has a considerable effect on the self-consistent potential profile which affects the Child sheath thickness. The latter increases from 3.8320 μm to 5.4190 μm when the presheath electron temperature increases from 10 eV to 20 eV. It is found that the number of ions reaching wall is higher than that of the electrons and hence the space charge density has its maximum value there. Furthermore, the temperature of ions in the sheath region increases with the increase in presheath ion temperature. Moreover, the cut-off distribution causes our simulation result to deviate from the theoretical result found for the Boltzmann distribution by about 3%. The coupling scheme presented here provides a basis for smooth transition of plasma parameters at the presheath-sheath interface. The proper understanding of the magnetized plasma-wall transition plays a vital role for further exploring the plasma sheath characteristics which has useful applications in fusion and industrial plasma devices.
机译:使用动力学轨迹仿真(KTS)方法延伸预鞘鞘参数的耦合,用于研究磁化等离子体护套,其中通过求解动力学方程,迭代地获得最终的自我一致状态。在我们的情况下,假设离子和电子速度分布函数是鞘入口处的截止扬持人。结果表明,截止和最大位剧的最大速度在鞘入口处和墙壁处具有相同的大小。预平电子温度对自呈屏蔽厚度影响的自一致电位曲线具有相当大的效果。当预升电子温度从10eV增加到20eV时,后者从3.8320μm增加到5.4190μm。结果发现,到达壁的离子数高于电子的数量,因此空间电荷密度在那里的最大值。此外,鞘区域中的离子温度随着预抗离子温度的增加而增加。此外,截止分布导致我们的仿真结果偏离发现的玻璃杆菌分布的理论结果约3%。这里提出的耦合方案为预鞘界面处的等离子体参数的平滑过渡提供了基础。对磁化等离子体壁转变的正确理解对于进一步探索具有有用应用在融合和工业等离子体器件中的等离子体鞘特性起着至关重要的作用。

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