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Correction to Theoretical Prediction of Umbilics Creation in Nematic Liquid Crystals with Positive Dielectric Anisotropy

机译:正电介质各向异性的向列液晶脐带林创建理论预测的校正

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On page S1 in the Supporting Information, the currenttext “In one-dimension (1D), the excess carrier densityδN(=(N i (x) ? N 0 ), where N 0 (=9.25 × 10 20 cm ?3 ) being thebulk free carrier density of ITO 4 ) induced in the accumilationlayer can be calculated from the Poisson equation 4 , as” shouldbe changed to “In one-dimension (1D), the excess carrierdensity δN induced in the accumulation layer in a cross sectionthrough the beam center along the x-axis supposed at y = 0 μmand z i = 30 μm relative to the Fe:LN interface with LC (asseen in Figure S1) can be calculated from 4 ”
机译:在页面S1中,在支持信息中,CurrentText“在一维(1D)中,多余的载波密度Δn(=(n i(x)?n 0),其中n 0(= 9.25×1020cm≤3)在积聚层中诱导的ITO 4的TheBulk自由载体密度可以从泊松等式4计算,因为在一维(1D)中,“应该改变为”,在横截面的横截面中诱导的累积层中引起的过量运输密度Δn沿着x轴的中心相对于Fe:LN接口与LC(如图S1中的Asseen)的LN接口,可以从4“沿着y =0μmANDZi =30μm。

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