A 5-V-Program 1-V-Sense Anti-Fuse Technology Featuring On-Demand Sense and Integrated Power Delivery in a 22-nm Ultra Low Power FinFET Process

摘要

A 11.56-kbit one-time programmable secure array featuring Intel’s first high-volume manufacturing (HVM) ready anti-fuse memory using the 22FFL process technology is reported. First, design and process technology are co-optimized to minimize the operating voltage, peripheral reliability stress, and area with dual gate-oxide 2-transistor (2T) bit cells. Second, a best reported array density and 1-V sense endurance supported by a low-voltage dynamic scheme that meets on-demand read requirements at a yield of 99.99% are demonstrated. Third, this is the first demonstration of integrated power delivery for anti-fuse memory in FinFET technologies. With program voltage limited to 5 V, 2-stage 1.8-V charge pumps improve system area and integration.