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APS -APS March Meeting 2017 - Event - Substitutional impurities in halfmetallic graphene/h-BN nanoribbons.

机译:APS -APS 3月会议2017年 - 事件 - 七分空石墨烯/ H-BN纳米中的替代杂质。

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Zigzag graphene nanoribbons (ZGNRs) present a half-metallic response for a critical external electric field valuewith possibilities for spin-filter applications. On the other hand, embedded ZGNRs in zigzag hexagonal boron nitride (ZBNNR) exhibit half-metallicity without the presence of an external field. In this work, we analyze electronic properties of a mixed nanoribbon system (ZBNR/ZGNR/ZBNR), using a Hubbard model Hamiltonian within a mean field approximation. Due to different electronegativities of the boron and nitrogen atoms, an electric field is induced across the ZGNR strip, breaking the spin degeneracy of the electronic band structure. Edge potentials as corrections for on-site energies are investigated, and also how they are affected due to the ZBNNR/ZGNR interfaces. Substitutional impurities are found as a mechanism to enhance half-metallic response. Here we analyze the effect of N and B impurities along the GNR and also through the interfaces. Energetic stabilities of the different configurations studied were included. We found that energy gap sizes may be properly engineered by controlling the spatial doping process and that binding energy impurity calculations may be used to study impurity diffusion processes along the mixed nanoribbons.
机译:Zigzag Graphene纳米杆(ZGNRS)为临界外部电场的半金属响应提供了一个半金属响应,用于旋转过滤器应用的可能性。另一方面,Z字形六边形氮化硼(ZBNNR)中的嵌入ZGNR在没有外部场的情况下表现出半金属性。在这项工作中,我们在平均场近似内使用Hubbard Model Hamiltonian分析混合纳米系统(ZBNR / ZGNR / ZBNR)的电子特性。由于硼和氮原子的不同电气,电场在ZGNR条带上诱导,断开电子带结构的旋转退化。对现场能量进行校正的边缘电位进行了研究,并且由于ZBNNR / ZGNR接口,它们如何受到影响。发现取代杂质作为增强半金属反应的机制。在这里,我们分析了N和B杂质沿着GNR和通过界面的影响。包括所研究的不同配置的能量稳定性。我们发现,通过控制空间掺杂工艺可以适当地设计能隙尺寸,并且可以使用结合能量杂质计算来研究沿混合纳米波巴的杂质扩散过程。

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