APS -APS March Meeting 2017 - Event - Formation of 2DEG at the interface of unconventional oxide hetero-structures by atomic layer deposition.

摘要

Two-dimensional electron gases (2DEGs) with a sheet carrier density of 10$^{mathrm{14}}$ cm$^{mathrm{-2}}$ and high electron mobility have been realized at the interface of SrTiO$_{mathrm{3}}$ and Al$_{mathrm{2}}$O$_{mathrm{3}}$ films grown by atomic layer deposition at very low temperatures. Possible origins for the high electron densities will be discussed. By controlling the interface, the sheet resistance exhibited a wide range of change from 10$^{mathrm{3}}$ to 10$^{mathrm{13hinspace }}Omega $/square. Temperature dependent Hall-effect measurements revealed metallic conduction and metal-semiconductor transitions. The effect of growth parameters, surface conditions, and film thickness on the transport properties of the interface will be discussed.