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首页> 外文期刊>Solar RRL >Toward High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 μm Polycrystalline Silicon on Glass
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Toward High Solar Cell Efficiency with Low Material Usage: 15% Efficiency with 14 μm Polycrystalline Silicon on Glass

机译:利用低材料的高太阳能电池效率:玻璃上的14μm多晶硅效率为15%

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摘要

Liquid-phase-crystallized silicon (LPC-Si) is a bottom-up approach to creating solar cells with the potential to avoid material loss and energy usage in wafer slicing techniques. A desired thickness of silicon (5–40 μm) is crystallized with a line-shaped energy source, which is a laser, herein. The first part reports the efforts to optimize amorphous silicon contact layers for better surface passivation. The second part covers laser firing on the electron contact. It enables a controllable trade-off between charge collection and fill factor (FF) by creating a low resistance contact, while preserving a-Si:H (ⅰ) passivation in other areas. Short-circuit current density (JSC) is observed to be up to 33:1 mA cm~(-2), surpassing all previously reported values for this technology. Open-circuit voltage (V_(OC)) of up to 658 mV also exceeded every previous value published at a low bulk doping concentration (1 × 10~(16) cm~(-3)). Laser firing reduced JSC by 0:6 mA cm~(-2) on average but improved the FF by 22.5% absolute on average, without any significant effect on V_(OC). Collectively, these efforts have helped in achieving a new in-house record efficiency for LPC-Si of 15.1% and show a potential to reach 16% efficiency in the near future with optimization of series resistance.
机译:液相结晶的硅(LPC-Si)是一种自下而上的方法,用于创造太阳能电池的潜力,以避免晶片切片技术中的材料损失和能量使用。所需厚度的硅(5-40μm)用线形能源结晶,其是激光器。第一部分报告了优化非晶硅接触层的努力,以实现更好的表面钝化。第二部分涵盖电子触点上的激光烧制。它通过产生低电阻接触,在保留A-Si:H(Ⅰ)在其他区域的钝化时,可以在充电收集和填充因子(FF)之间进行可控折衷。观察到短路电流密度(JSC)高达33:1 mA cm〜(-2),超越了这项技术的所有先前报告的值。高达658 mV的开路电压(V_(oc))也超过了低散装掺杂浓度(1×10〜(16)cm〜(-3))发布的每个先前值。平均激光烧制减少0:6 mA cm〜(-2),但平均为FF的绝对产生22.5%,对V_(OC)没有任何显着影响。统称,这些努力有助于实现15.1%的LPC-SI的新内部记录效率,并在促进串联抗性的不久的情况下显示出在不久的将来达到16%的效率。

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  • 来源
    《Solar RRL》 |2020年第6期|2000058.1-2000058.8|共8页
  • 作者单位

    Institute for Silicon Photovoltaics Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 12489 Berlin Germany;

    Institute for Silicon Photovoltaics Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 12489 Berlin Germany;

    Institute of Technology Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 12489 Berlin Germany;

    PVcomB Helmholtz-Zentrum Berlin für Materialen und Energie GmbH 12489 Berlin Germany;

    PVcomB Helmholtz-Zentrum Berlin für Materialen und Energie GmbH 12489 Berlin Germany;

    Institute for Silicon Photovoltaics Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 12489 Berlin Germany;

    Institute for Silicon Photovoltaics Helmholtz-Zentrum Berlin für Materialien und Energie GmbH 12489 Berlin Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    foreign substrates; laser fired contacts; liquid-phase-crystallized silicon; passivation; interdigitated back contacts;

    机译:国外基材;激光触点;液相结晶的硅;钝化;interdigated背面接触;

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