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首页> 外文期刊>Scientific reports. >Flexible memristive devices based on polyimide:mica nanosheet nanocomposites with an embedded PEDOT:PSS layer
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Flexible memristive devices based on polyimide:mica nanosheet nanocomposites with an embedded PEDOT:PSS layer

机译:基于具有嵌入式PEDOT:PSS层的聚酰亚胺:云母纳米片纳米复合材料的柔性忆阻器件

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Flexible memristive devices with a structure of Al/polyimide:mica/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/indium-tin-oxide/polyethylene glycol naphthalate showed electrical bistability characteristics. The maximum current margin of the devices with mica nanosheets was much larger than that of the devices without mica nanosheets. For these devices, the current vs. time curves showed nonvolatile characteristics with a retention time of more than 1?×?104?s, and the current vs. number-of-cycles curves demonstrated an endurance for high resistance state/low resistance state switchings of 1?×?102 cycles. As to the operation performance, the “reset” voltage was distributed between 2.5 and 3?V, and the “set” voltage was distributed between ?0.7 and ?0.5?V, indicative of high uniformity. The electrical characteristics of the devices after full bendings with various radii of curvature were similar to those before bending, which was indicative of devices having ultra-flexibility. The carrier transport and the operation mechanisms of the devices were explained based on the current vs. voltage curves and the energy band diagrams.
机译:具有Al /聚酰亚胺:云母/聚(3,4-乙撑二氧噻吩)聚苯乙烯磺酸盐/氧化铟锡/聚萘二甲酸乙二醇酯的结构的柔性忆阻器件显示出电双稳态特性。具有云母纳米片的装置的最大电流裕度比不具有云母纳米片的装置的最大电流裕度大得多。对于这些器件,电流-时间曲线显示出非易失性特性,保留时间超过1?×?10 4 ?s,电流-周期数曲线显示出持久性1?×?10 2 周期的高电阻状态/低电阻状态切换。关于操作性能,“复位”电压分布在2.5至3?V之间,而“设定”电压分布在?0.7至?0.5?V之间,表明具有较高的均匀性。具有各种曲率半径的完全弯曲后的器件的电学特性与弯曲前的相似,这表明器件具有超柔韧性。基于电流-电压曲线和能带图解释了器件的载流子传输和操作机理。

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