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Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant

机译:通过以溶解氧为氧化剂的底物增强金属催化硅的化学刻蚀连续生产硅纳米线

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Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology commercialization. However, economic, controlled large-scale production of SiNWs remains challenging and rarely attainable. Here, we demonstrate a facile strategy capable of low-cost, continuous-flow mass production of SiNWs on an industrial scale. The strategy relies on substrate-enhanced metal-catalyzed electroless etching (MCEE) of silicon using dissolved oxygen in aqueous hydrofluoric acid (HF) solution as an oxidant. The distinct advantages of this novel MCEE approach, such as simplicity, scalability and flexibility, make it an attractive alternative to conventional MCEE methods.
机译:硅纳米线(SiNWs)由于其独特的性能以及在光伏设备,热电设备,锂离子电池和生物技术中的有前途的应用而吸引了越来越多的兴趣。 SiNW的低成本批量生产对于基于SiNWs的纳米技术商业化至关重要。但是,经济,可控的大规模生产SiNW仍然具有挑战性,而且很难达到。在这里,我们展示了一种可行的策略,能够在工业规模上低成本,连续流式大规模生产SiNW。该策略依赖于使用氢氟酸水溶液(HF)中的溶解氧作为氧化剂对硅进行增强的金属催化金属化学镀(MCEE)。这种新颖的MCEE方法的独特优势(例如简单性,可伸缩性和灵活性)使其成为传统MCEE方法的诱人替代品。

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