首页> 外文期刊>Bulletin of the American Physical Society >APS -Joint Fall 2017 Meeting of the Texas Section of the APS, Texas Section of the AAPT, and Zone 13 of the Society of Physics Students- Event - Using Defect Creation for Directional Sensitivity and Dark Matter Signal Discrimination in Phonon-Mediated Detectors
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APS -Joint Fall 2017 Meeting of the Texas Section of the APS, Texas Section of the AAPT, and Zone 13 of the Society of Physics Students- Event - Using Defect Creation for Directional Sensitivity and Dark Matter Signal Discrimination in Phonon-Mediated Detectors

机译:APS-APS德克萨斯州分部,AAPT德克萨斯州分部以及物理学生学会第13区2017年秋季联合会议-事件-在声子介导的探测器中使用缺陷创建进行方向灵敏度和暗物质信号识别

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摘要

We examine two potential applications of defect formation for dark matter detectors - directionality and nuclear-electron recoil discrimination. Numerical simulations of classical interatomic potentials, alongside more precise density functional theory simulations and experiments, predict an angular dependence in the defect formation energy threshold that varies by around 20 eV from minimum to maximum. Additionally, they predict a nonisotropic, nonlinear energy loss in semiconductor detector materials that never produces phonons due to the nonzero energy required to form defects. Next-generation dark matter and coherent neutrino nuclear scattering, such as SuperCDMS and MINER, are poised to reach the resolutions necessary to detect these effects. Once these detectors are calibrated at these low recoil energies, we argue that the anisotropy in defect formation in single-electron resolution semiconductor detectors allows for very effective directional sensitivity to dark matter signals for masses below 1 GeV/c$^2$. Additionally, defect creation from nuclear recoil interactions distorts the expected spectra in such a way that, statistically, one can discriminate nuclear recoils from electron recoils with only phonon measurements, especially in the mass range below 10 GeV/c$^2$.
机译:我们研究了暗物质探测器缺陷形成的两个潜在应用-方向性和核电子反冲判别。经典原子间电势的数值模拟以及更精确的密度泛函理论模拟和实验预测,缺陷形成能量阈值的角度依赖性从最小到最大变化约20 eV。此外,他们预测半导体检测器材料中的非各向同性,非线性能量损失,由于形成缺陷所需的非零能量,该能量永远不会产生声子。下一代暗物质和相干中微子核散射(例如SuperCDMS和MINER)已准备好达到检测这些效应所必需的分辨率。一旦以这些低后坐力校准了这些探测器,我们认为单电子分辨率半导体探测器中缺陷形成的各向异性使得对于质量低于1 GeV / c $ ^ 2 $的暗物质信号具有非常有效的方向敏感性。另外,由核反冲相互作用产生的缺陷会扭曲预期的光谱,从统计上讲,仅通过声子测量就可以将核反冲与电子反冲区别开来,特别是在质量范围低于10 GeV / c $ ^ 2 $的情况下。

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