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APS -APS March Meeting 2017 - Event - The Lieb lattice near 1/6 filling

机译:APS -APS 2017年3月会议-活动-Lieb点阵接近1/6填充

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The interplay between van Hove singularities, nesting, and particle-hole symmetry influences the magnetic and transport properties of interacting electrons in fundamental ways. We consider a Hubbard model for interacting electrons on a Lieb lattice (or CuO$_2$ lattice) under the following simplifying assumptions: an on-site repulsion $U_d>0$ is assumed to be effective solely on Cu sites, so that $U_p=0$; vanishing site energies, $varepsilon_d=varepsilon_p=0$; and hopping is only allowed between Cu and O sites. For the non-interacting case at 1/6 filling (electronic density $ho=1/3$), the density of states (DOS) displays a van Hove singularity, and the Fermi surface is nested. In order to probe the interplay between these features, we use Determinant Quantum Monte Carlo simulations and Lanczos diagonalizations (with twisted boundary conditions) to investigate the physical properties at this filling and slightly doped away from it. We identify sharp enhancement of antiferromagnetic correlations on $d$ sites exactly at this filling, due to nesting, and investigate possible Mott insulating behavior with $U_d$. Further, we examine the behavior of charge correlations, and different pairing susceptibilities in order to probe some enhancement of superconducting correlations.
机译:van Hove奇异性,嵌套和粒子-孔对称性之间的相互作用以根本方式影响相互作用电子的磁性和传输性质。在以下简化假设下,我们考虑了一个哈伯德模型,该模型用于在李布晶格(或CuO $ _2 $晶格)上相互作用的电子:现场排斥$ U_d> 0 $仅在Cu位置有效,因此$ U_p = 0 $;消失的位能量,$ varepsilon_d = varepsilon_p = 0 $;并且只允许在Cu和O位置之间跳跃。对于填充为1/6的非交互情况(电子密度$ ho = 1/3 $),状态密度(DOS)显示van Hove奇异性,并且费米表面是嵌套的。为了探究这些特征之间的相互作用,我们使用行列式量子蒙特卡洛模拟和Lanczos对角化(具有扭曲的边界条件)来研究这种填充物并从其稍微掺杂而来的物理性质。由于嵌套,我们确定恰好在此填充处$ d $位置上反铁磁相关性的急剧增强,并研究了$ U_d $可能的Mott绝缘行为。此外,我们研究了电荷相关性的行为以及不同的配对磁化率,以探究超导相关性的增强。

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