APS -Joint Fall 2017 Meeting of the Texas Section of the APS, Texas Section of the AAPT, and Zone 13 of the Society of Physics Students- Event - Calculation of distributio of Temperature and potential on RRAM using finite element method

摘要

Finite element calculations are being performed on resistive RAM (RRAM) devices to determine theelectric potential and temperature distribution across the wafer. RRAM is a non-volatile memorytechnology that is currently being considered to replace Flash memory beyond 14 nm technology node.The calculations are performed using Comsol Multiphysics using the electric current and heat transfer insolids features. We used three Multiphysics nodes, i.e. Electromagnetic heat source, the boundary heatsource and temperature coupling. The device was built from a plane geometry of substrate (fused quartz),bottom electrode (Pt), oxide (NiO), and top electrode (Pt) and then extruded each in the z-direction. Aphysics controlled normal mess was used for the calculations consisting of tetrahedral elements.Calculations were performed for a high and low resistive memory layer. In both cases the potential varieslinearly along the electrodes. For the high resistive device, the temperature is highest in the center. Forthe low resistive device Joule heating mainly takes place along the electrodes and the temperature variesmuch less across the wafer. This work was supported by a DOD grant (HBCU/MI grant W911NF-15-1-0394).