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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Bi-2212/TaS$_2$ Van der Waals Junctions: Interplay of proximity induced high-$T_c$ Superconductivity and CDW order
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APS -APS March Meeting 2017 - Event - Bi-2212/TaS$_2$ Van der Waals Junctions: Interplay of proximity induced high-$T_c$ Superconductivity and CDW order

机译:APS -APS 2017年3月会议-活动-Bi-2212 / TaS $ _2 $ Van der Waals交界处:邻近感应高T $ c $超导和CDW顺序之间的相互作用

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摘要

We present an experimental observation of high-$T_c$ superconducting proximity effect by using four-terminal current-voltage measurements to study the Van der Waals interface between freshly exfoliated flakes of the high-$T_{c}$ superconductor, Bi-2212, and the CDW-dominated TMD layered material, 1T-TaS$_{2}$. For highly transparent barriers, there is a pronounced Andreev reflection feature providing evidence for proximity-induced high-$T_{c}$ superconductivity in 1T-TaS$_{2}$ with a surprisingly large energy gap ($sim 20$meV) equal to half that of intrinsic Bi-2212 ($sim 40$meV). Our systematic study using conductance spectroscopy $dI/dV$ of junctions with different transparencies also reveals the presence of two separate boson modes, each associated with a ``dip-hump" structure. We infer that the proximity-induced high-$T_c$ superconductivity in the TaS$_2$ is driven by coupling to the metastable metallic phase coexisting within the Mott-CCDW (commensurate CDW) phase.
机译:我们使用四端电流-电压测量结果来研究高$ T_c $超导邻近效应的实验观察,以研究新鲜的高$ T_ {c} $超导体片Bi-2212的剥落薄片之间的范德华界面, CDW为主的TMD分层材料1T-TaS $ _ {2} $。对于高度透明的壁垒,有一个明显的安德列夫反射特征,为1T-TaS $ _ {2} $中感应引起的高$ T_ {c} $超导性提供了证据,并且具有惊人的能隙(sim 20 $ meV)等于内在Bi-2212($ sim 40 $ meV)的一半。我们使用电导光谱学$ dI / dV $对具有不同透明度的结进行了系统研究,还揭示了存在两个独立的玻色子模式,每个玻色子模式都与“ dip-hump”结构相关。 TaS $ _2 $中的超导性是通过耦合到Mott-CCDW(相称CDW)相中共存的亚稳金属相来驱动的。

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