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ELECTRON-IMPACT IONIZATION OF P-LIKE IONS FORMING Si-LIKE IONS

机译:电子碰撞电离形成硅样离子

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摘要

We have calculated electron-impact ionization (EII) for P-like systems from P to Zn15 + forming Si-like ions. The work was performed using the flexible atomic code (FAC) which is based on a distorted-wave approximation. All 3? → n?' (n = 3-35) excitation-autoionization (EA) channels near the 3p direct ionization threshold and 2? → n?' (n = 3-10) EA channels at the higher energies are included. Close attention has been paid to the detailed branching ratios. Our calculated total EII cross sections are compared both with previous FAC calculations, which omitted many of these EA channels, and with the available experimental results. Moreover, for Fe11 +, we find that part of the remaining discrepancies between our calculations and recent measurements can be accounted for by the inclusion of the resonant excitation double autoionization process. Lastly, at the temperatures where each ion is predicted to peak in abundances in collisional ionization equilibrium, the Maxwellian rate coefficients derived from our calculations differ by 50%-7% from the previous FAC rate coefficients, with the difference decreasing with increasing charge.
机译:我们已经计算出从P到Zn15 +的P样系统形成的Si离子的电子碰撞电离(EII)。这项工作是使用基于扭曲波近似的弹性原子代码(FAC)进行的。全部三个? →n? (n = 3-35)接近3p直接电离阈值和2π的激发自电离(EA)通道。 →n? (n = 3-10)包含较高能量的EA通道。密切关注了详细的分支比例。我们将计算出的EII总横截面与以前的FAC计算(它们省略了许多EA通道)以及可用的实验结果进行了比较。此外,对于Fe11 +,我们发现我们的计算与最近的测量值之间的其余部分差异可以通过包括共振激发双自电离过程来解决。最后,在预测每个离子在碰撞电离平衡中达到峰值的温度下,根据我们的计算得出的麦克斯韦速率系数与以前的FAC速率系数相差50%-7%,随着电荷的增加,差异减小。

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