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外文期刊>The Astrophysical journal
>FORWARD MODELING OF EMISSION IN SOLAR DYNAMICS OBSERVATORY/ATMOSPHERIC IMAGING ASSEMBLY PASSBANDS FROM DYNAMIC THREE-DIMENSIONAL SIMULATIONS
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FORWARD MODELING OF EMISSION IN SOLAR DYNAMICS OBSERVATORY/ATMOSPHERIC IMAGING ASSEMBLY PASSBANDS FROM DYNAMIC THREE-DIMENSIONAL SIMULATIONS
It is typically assumed that emission in the passbands of the Atmospheric Imaging Assembly (AIA) on board the Solar Dynamics Observatory (SDO) is dominated by single or several strong lines from ions that under equilibrium conditions are formed in a narrow range of temperatures. However, most SDO/AIA channels also contain contributions from lines of ions that have formation temperatures that are significantly different from the "dominant" ion(s). We investigate the importance of these lines by forward modeling the emission in the SDO/AIA channels with three-dimensional radiative MHD simulations of a model that spans the upper layer of the convection zone to the low corona. The model is highly dynamic. In addition, we pump a steadily increasing magnetic flux into the corona, in order to increase the coronal temperature through the dissipation of magnetic stresses. As a consequence, the model covers different ranges of coronal temperatures as time progresses. The model covers coronal temperatures that are representative of plasma conditions in coronal holes and quiet Sun. The 131, 171, and 304 ? AIA passbands are found to be the least influenced by the so-called non-dominant ions, and the emission observed in these channels comes mostly from plasma at temperatures near the formation temperature of the dominant ion(s). On the other hand, the other channels are strongly influenced by the non-dominant ions, and therefore significant emission in these channels comes from plasma at temperatures that are different from the "canonical" values. We have also studied the influence of non-dominant ions on the AIA passbands when different element abundances are assumed (photospheric and coronal), and when the effects of the electron density on the contribution function are taken into account.
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