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Guidelines for Designing Surface Ion Traps Using the Boundary Element Method

机译:使用边界元方法设计表面离子阱的准则

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摘要

Ion traps can provide both physical implementation of quantum information processing and direct observation of quantum systems. Recently, surface ion traps have been developed using microfabrication technologies and are considered to be a promising platform for scalable quantum devices. This paper presents detailed guidelines for designing the electrodes of surface ion traps. First, we define and explain the key specifications including trap depth, q -parameter, secular frequency, and ion height. Then, we present a numerical-simulation-based design procedure, which involves determining the basic assumptions, determining the shape and size of the chip, designing the dimensions of the radio frequency (RF) electrode, and analyzing the direct current (DC) control voltages. As an example of this design procedure, we present a case study with tutorial-like explanations. The proposed design procedure can provide a practical guideline for designing the electrodes of surface ion traps.
机译:离子阱既可以提供量子信息处理的物理实现,也可以提供对量子系统的直接观察。近来,已经使用微细加工技术开发了表面离子阱,并且被认为是可扩展量子设备的有前途的平台。本文介绍了设计表面离子阱电极的详细指南。首先,我们定义和解释关键技术指标,包括阱深度,q参数,长期频率和离子高度。然后,我们提出了一种基于数值模拟的设计程序,其中包括确定基本假设,确定芯片的形状和尺寸,设计射频(RF)电极的尺寸以及分析直流(DC)控制电压。作为此设计过程的一个示例,我们提供了一个案例研究,并带有类似教程的说明。所提出的设计程序可以为设计表面离子阱的电极提供实用的指导。

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