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Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

机译:使用硅和氮化三氮材料的单光子计数紫外日盲探测器

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摘要

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ? 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.
机译:在天文学,宇宙学,行星研究,生物和医学应用中的紫外线(UV)研究通常需要对微弱物体进行精确检测,在许多情况下,还需要进行光子计数检测。我们概述了在紫外线中实现光子计数的两种方法。第一种方法涉及对光子计数硅探测器的紫外线增强,包括电子倍增电荷耦合器件和雪崩光电二极管。此处使用的方法采用分子束外延进行δ掺杂,采用超晶格掺杂进行表面钝化和提高UV量子效率。其他的紫外线增强功能包括通过原子层沉积制备的抗反射(AR)和日盲UV带通涂层。量子效率(QE)测量表明,对于具有简单增透膜的检测器,在100-300 nm范围内,QE> 50%。使用更复杂的增透膜时,在〜206 nm处显示80%的光。第二种方法基于具有高QE和固有日盲性的III型氮化物材料中的雪崩光电二极管。
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