As highly sensitive H2S gas sensors, Au- and Ag-catalyzed SnO2 thin films with morphology-controlled nanostructures were fabricated by using e-beam evaporation in combination with the glancing angle deposition (GAD) technique. After annealing at 500 °C for 40 h, the sensors showed a polycrystalline phase with a porous, tilted columnar nanostructure. The gas sensitivities (S = Rgas/Rair) of Au and Ag-catalyzed SnO2 sensors fabricated by the GAD process were 0.009 and 0.015, respectively, under 5 ppm H2S at 300 °C, and the 90% response time was approximately 5 s. These sensors showed excellent sensitivities compared with the SnO2 thin film sensors that were deposited normally (glancing angle = 0°, S = 0.48).
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机译：作为高灵敏度的H 2 S气体传感器，结合电子束蒸发法和电子束蒸发法制备了Au和Ag催化的形貌控制纳米结构的SnO 2 薄膜。掠角沉积（GAD）技术。在500°C下退火40小时后，传感器显示出具有多孔，倾斜的柱状纳米结构的多晶相。通过GAD工艺制备的Au和Ag催化的SnO 2 传感器的气体敏感性（S = R gas / R air ）分别为0.009和在300°C下5 ppm H 2 S下分别为0.015，90％响应时间约为5 s。与正常沉积的SnO 2 薄膜传感器相比（摆角= 0°，S = 0.48），这些传感器具有出色的灵敏度。
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