This paper presents a CMOS temperature sensor based on the thermal dependencies of the leakage currents targeting the 65 nm node. To compensate for the effect of process fluctuations, the proposed sensor realizes the ratio of two measures of the time it takes a capacitor to discharge through a transistor in the subthreshold regime. Furthermore, a novel charging mechanism for the capacitor is proposed to further increase the robustness against fabrication variability. The sensor, including digitization and interfacing, occupies 0.0016 mm2 and has an energy consumption of 47.7–633 pJ per sample. The resolution of the sensor is 0.28 °C, and the 3σ inaccuracy over the range 40–110 °C is 1.17 °C.
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机译：本文提出了一种基于针对65 nm节点的泄漏电流的热依赖性的CMOS温度传感器。为了补偿过程波动的影响，所提出的传感器实现了在亚阈值状态下电容器通过晶体管放电所需的时间的两个量度之比。此外，提出了一种新颖的电容器充电机制，以进一步提高抵抗制造可变性的鲁棒性。该传感器（包括数字化和接口）占用0.0016 mm 2 ，每个样品的能耗为47.7–633 pJ。传感器的分辨率为0.28°C，在40–110°C范围内的3σ误差为1.17°C。
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