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Single-Chip Fully Integrated Direct-Modulation CMOS RF Transmitters for Short-Range Wireless Applications

机译:适用于短距离无线应用的单芯片全集成直接调制CMOS RF发射机

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Ultra-low power radio frequency (RF) transceivers used in short-range application such as wireless sensor networks (WSNs) require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs) in addition to a 2.0 GHz phase-locked loop (PLL) based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 μm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of −122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of −120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.
机译:在诸如无线传感器网络(WSN)之类的短距离应用中使用的超低功率射频(RF)收发器需要高效,可靠和完全集成的发射器架构,并具有最少的构建模块。本文介绍了基于2.0 GHz锁相环(PLL)的单芯片,完全集成的2.4 GHz和433 MHz RF发射机的设计,实现和性能评估,这些发射机使用直接调制功率压控振荡器(PVCO)发射机。所有三个RF发射机均采用标准的混合信号CMOS 0.18μm技术制造。 2.4 GHz发射机的测量结果表明,漏极效率从27%提高到36%。 2.4 GHz和433 MHz发射器在1 MHz偏移下提供8 dBm的输出功率和-122 dBc / Hz的相位噪声,而消耗15.4 mA的电流和6.5 dBm的输出功率以及-120 dBc的相位噪声/ Hz在1 MHz偏移时,同时分别从1.5 V电源汲取20.8 mA电流。 PLL发送器的输出功率为9 mW,锁定范围为128 MHz,从1.8 V电源消耗26 mA的电流。实验结果表明,RF发射机可以有效地用于低功率WSN应用中。

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