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Preparation of large-area ultrathin carbon semiconductors converted from conjugated microporous polymer films

机译:由共轭微孔聚合物薄膜转化制备大面积超薄碳半导体

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摘要

Two-dimensional carbon semiconductors have aroused great attention due to their unique structures and novel properties, showing potential applications in emerging electronic and optoelectronic devices. In this work, we reported an effective strategy to controllable prepare ultrathin carbon nanofilms (CNFs) by combining in situ -growth and stepwise thermal annealing, with the features of large-area, tunable properties and nanoscale thickness. The structures, morphologies and electrical properties of these as-prepared CNFs were characterized systematically. Impressively, tunable electrical properties from low to semi- and high conductivity could be precisely achieved through stepwise annealing of conjugated microporous polymer films. By introducing CNF-750 as the active channel layer, the transistor exhibited a typical p-type semiconductor property. Moreover, by further coupling CNF-750 with carbon dots (CDs) as a photoresponse layer, the as-fabricated all-carbon diode based on CDs/CNF-750 heterostructure film showed high ultraviolet (UV) light response.
机译:二维碳半导体由于其独特的结构和新颖的性能而引起了极大的关注,显示了在新兴的电子和光电设备中的潜在应用。在这项工作中,我们报告了一种有效的策略,该方法可通过结合原位生长和逐步热退火来控制可制备超薄碳纳米膜(CNF),并具有大面积,可调节的特性和纳米级的厚度。对所制备的CNF的结构,形态和电性能进行了系统表征。令人印象深刻的是,可以通过逐步退火共轭微孔聚合物薄膜来精确地实现从低,半和高电导率可调的电性能。通过引入CNF-750作为有源沟道层,该晶体管表现出典型的p型半导体特性。此外,通过将CNF-750与碳点(CD)进一步耦合作为光响应层,基于CDs / CNF-750异质结构膜的已加工全碳二极管显示出高紫外(UV)光响应。

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