Ternary oxide Zn _(2) GeO _(4) with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290–400 nm) and only responsive to the UV-C band (200–290 nm). Here, we report on the synthesis of Zn _(2) GeO _(4) nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn _(2) GeO _(4) NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn _(2) GeO _(4) NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times ( t _(rise) ≈ 0.17 s and t _(decay) ≈ 0.14 s).
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