Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

摘要

The interfacial electronic structure between a W-doped In _(2) O _(3) (IWO) transparent electrode and a V _(2) O _(5) hole injection layer (HIL) has been investigated using ultraviolet photoelectron spectroscopy for high-performance and inorganic quantum-dot light-emitting diodes (QLEDs). Based on the interfacial electronic structure measurements, we found gap states in a V _(2) O _(5) HIL at 1.0 eV below the Fermi level. Holes can be efficiently injected from the IWO electrode into poly[(9,9-dioctylfluorenyl-2,7-diyl)- co -(4,4′-(4- sec -butylphenyl)diphenylamine)] (TFB) through the gap states of V _(2) O _(5) , which was confirmed by the hole injection characteristics of a hole-only device. Therefore, conventional normal-structured QLEDs were fabricated on a glass substrate with the IWO transparent electrode and V _(2) O _(5) HIL. The maximum luminance of the device was measured as 9443.5 cd m ~(?2) . Our result suggests that the IWO electrode and V _(2) O _(5) HIL are a good combination for developing high-performance and inorganic QLEDs.