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Growth, structural, optical, electrical and SHG studies of N-N′ allylthiourea doped KDP single crystals

机译:N-N'烯丙基硫脲掺杂的KDP单晶的生长,结构,光学,电和SHG研究

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Potassium Dihydrogen Phosphate (KDP) crystals are one of the most popular crystals used for Non-linear Optical (NLO) applications. Pure KDP single crystals and KDP crystals doped with N-N′ allylthiourea were grown by the method of slow evaporation from aqueous solutions. The grown pure and doped crystals were confirmed by X-ray single crystal and powder diffraction studies. The pure and doped crystals were characterized by FTIR spectroscopy studies. Absorptions of these grown crystals were analyzed using UV–Vis–NIR studies, and it was found that these crystals possess minimum absorption in the entire visible region. Nonlinear optical studies of pure and doped crystals were carried out and it reveals that the dopants have increased the efficiency of KDP crystals. Dielectric measurements were carried out along both the unique axis and perpendicular directions at various temperatures ranging from 40 to 150 °C. The dielectric constant and the dielectric loss values of N-N′ allylthiourea doped KDP crystals were lower than the pure KDP crystals. Also, it indicates that 0.8 mole% N-N′ allylthiourea addition to KDP leads to low permittivity value dielectrics. The results are discussed.
机译:磷酸二氢钾(KDP)晶体是用于非线性光学(NLO)应用的最受欢迎的晶体之一。通过从水溶液中缓慢蒸发的方法来生长纯KDP单晶和掺有N-N'烯丙基硫脲的KDP晶体。通过X射线单晶和粉末衍射研究证实了生长的纯净和掺杂的晶体。纯的和掺杂的晶体通过FTIR光谱学研究表征。使用UV-Vis-NIR研究分析了这些生长晶体的吸收,发现这些晶体在整个可见光区的吸收最小。对纯晶体和掺杂晶体进行了非线性光学研究,结果表明,掺杂剂提高了KDP晶体的效率。在40至150°C的各种温度下,沿唯一轴和垂直方向进行介电测量。 N-N'烯丙基硫脲掺杂的KDP晶体的介电​​常数和介电损耗值均低于纯KDP晶体。而且,这表明向KDP中添加0.8摩尔%的N-N'烯丙基硫脲导致介电常数值低的电介质。讨论了结果。

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