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Synthesis and Characterization of SiO2-Sheathed ZnSe Nanowires

机译:SiO2包覆ZnSe纳米线的合成与表征。

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ZnSe/SiO2 coaxial nanowires were synthesized by a two-step process: thermal evaporation of ZnSe powders and sputter-deposition of SiO2. Two different types of nanowires are observed: thin rod-like ones with a few to a few tens of nanometers in diameter and up to a few hundred of micrometers in length and wide belt-like ones with a few micrometers in width. Room-temperature photoluminescence (PL) measurement showed that ZnSe/ SiO2 coaxial nanowires had an orange emission band centered at approximately 610 nm. The intensity of the orange emission from the SiO2-sheathed ZnSe nanowires was enhanced significantly by annealing in a reducing atmosphere whereas it was degraded by annealing in an oxidizing atmosphere. The origins of the PL changes by annealing are discussed based on the energy-dispersive X-ray spectroscopy analysis results.
机译:ZnSe / SiO2同轴纳米线通过两步过程合成:ZnSe粉末的热蒸发和SiO2的溅射沉积。观察到两种不同类型的纳米线:细的棒状纳米线,其直径为几纳米至几十纳米,长度可达几百微米;宽的带状纳米线,其宽度为几微米。室温光致发光(PL)测量表明ZnSe / SiO2同轴纳米线的橙色发射带中心在大约610 nm。通过在还原气氛中退火而显着增强了从带有SiO 2的ZnSe纳米线包覆的橙色发射的强度,而通过在氧化气氛中进行退火使橙色发射的强度降低。基于能量色散X射线光谱分析结果,讨论了退火引起的PL变化的起源。

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