Influence of SiO₂ Capping and Annealing on the Luminescence Properties of Larva-Like GaS Nanostructures

摘要

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with SiO2 by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/SiO2-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous SiO2, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with SiO2 without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.