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An Effective Nitrogen Doping Technique for Improving the Performance of Lithium Ion Batteries with CNT Based Electrodes

机译:利用CNT基电极改善锂离子电池性能的有效氮掺杂技术

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Lithium ion batteries are among the most used rechargeable batteries in the world. Carbon nanostructures including carbon nanotubes (CNTs) are considered as important electrode materials for this kind of batteries. Therefore improving the performance of these carbon based electrodes in Lithium ion batteries is an important issue and attracts much attention in the battery community. In this manuscript, a new method for high content Nitrogen doping on CNTs is reported as an efficient approach for enhancing the battery performance. Direct current-plasma enhanced chemical vapor deposition (DC-PECVD) system was used for nitrogen doping. Annealing with Nitrogen during CNT growth and plasma exposure after the growth has been used for Nitrogen doping of the CNTs. The growth was performed on an Indium Tin oxide (ITO) covered Silicon substrate. Implementation of Silicon substrate enables the possibility of future integration of other electronic circuits with the fabricated Lithium ion battery. Vertically aligned CNTs with an average diameter of around 150 nm and 4 um height has been obtained on this substrate. The synthesized CNTs was subsequently used as the electrode of Lithium ion battery in a half cell configuration. The results show a significant improvement of about 400% in the specific capacity of the battery as a result of Nitrogen doping. For Nitrogen doped CNT based battery, specific capacity of around 0.4 mAh/cm2 and coulombic efficiency of 97% were achieved after 28 cycles of charge/discharge with C rate of 2.5. This Nitrogen doping method is propped as an efficient technique for enhancing the performance of Lithium ion batteries with carbon based electrodes.
机译:锂离子电池是世界上最常用的可充电电池之一。包括碳纳米管(CNT)在内的碳纳米结构被认为是此类电池的重要电极材料。因此,改善锂离子电池中这些碳基电极的性能是重要的问题,并且在电池界引起了广泛的关注。在此手稿中,报道了一种在CNT上进行高含量氮掺杂的新方法,是提高电池性能的有效方法。直流等离子体增强化学气相沉积(DC-PECVD)系统用于氮掺杂。在CNT生长期间进行氮气退火,以及在生长之后进行等离子体暴露已被用于CNT的氮掺杂。在覆盖有铟锡氧化物(ITO)的硅衬底上进行生长。硅衬底的实现使得将来其他电子电路与制造的锂离子电池集成成为可能。在该基板上已获得平均直径约为150 nm,高度为4 um的垂直排列的CNT。随后将合成的CNT用作半电池配置的锂离子电池的电极。结果表明,由于氮掺杂,电池的比容量显着提高了约400%。对于氮掺杂的CNT基电池,在28个C / C速率为2.5的充电/放电循环后,比容量约为0.4 mAh / cm2,库伦效率为97%。这种氮掺杂方法被认为是提高具有碳基电极的锂离子电池性能的有效技术。

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