The contribution of 3D nanoscale indium fluctuations into the efficiency droop in the green and blue InGaN/GaN LEDs

N A Talnishnikh; A E Chernyakov; E I Shabunina; N M Shmidt

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The contribution of 3D nanoscale indium fluctuations into the efficiency droop in the green and blue InGaN/GaN LEDs

机译：3D纳米级铟涨落对绿色和蓝色InGaN / GaN LED中的效率下降的贡献

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Itwasshownthatthecontributionof3Dnanoscaleindiumfluctuationsintotheefficiencydroopatj50A/cm2canbeveryhighandresultsindifferentshapesoftheefficiencydependencyoncurrentη(j)inblueandgreenLEDs.Reducing3DnanoscaleindiumfluctuationscandecreasetheefficiencydroopintheseLEDs.Thecontributionofdelocalizedcarriersispredominantatj50A/cm2andthecurrentdependencesofefficiency,approximatedbyasη(j)αj-bwhere0.2b0.3,arealikeinbothgreenandblueLEDs...

机译：Itwasshownthatthecontributionof3Dnanoscaleindiumfluctuationsintotheefficiencydroopatj <50A /cm2canbeveryhighandresultsindifferentshapesoftheefficiencydependencyoncurrentη（j）的inblueandgreenLEDs.Reducing3DnanoscaleindiumfluctuationscandecreasetheefficiencydroopintheseLEDs.Thecontributionofdelocalizedcarriersispredominantatj> 50A / cm2andthecurrentdependencesofefficiency，approximatedbyasη（j）的αj-bwhere0.2的 展开▼

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《Journal of Physics: Conference Series》 |2016年第1期|共页

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N A Talnishnikh; A E Chernyakov; E I Shabunina; N M Shmidt;
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中图分类物理学;

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入库时间 2022-08-18 17:02:37

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专利

1. Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses [J] . Yang J., Zhao D. G., Jiang D. S., Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2016,第Null期

机译：不同GaN盖层厚度的InGaN / GaN多量子阱绿色LED的性能和效率下降行为研究

2. Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes [J] . Shih-Chun Ling, Tien-Chang Lu, Shih-Pang Chang, Applied Physicsletters . 2010,第23期

机译：蓝绿色m面InGaN / GaN发光二极管中的低效率下降

3. Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED [J] . WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, 中国物理快报：英文版 . 2011,第011期

机译：InGaN / GaN蓝色MQW LED的效率下降效应机理

4. Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model [C] . Tsung-Jui Yang, James S. Speck, Yuh-Renn Wu Gallium nitride materials and devices IX . 2014

机译：完整3D仿真模型的InGaN量子阱LED中纳米级铟涨落对效率下降的影响

5. Growth, Fabrication and Characterization of InGaN/GaN-based Blue, Green and Yellow LEDs on Si with Nanotechnology. [D] . Zou, Xinbo. 2013

机译：利用纳米技术在Si上生长，制造和表征基于InGaN / GaN的蓝色，绿色和黄色LED。

6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率

7. Explanation of low efficiency droop in semipolar $(20\bar 2\bar 1)$ InGaN/GaN LEDs through evaluation of carrier recombination coefficients [O] . Monavarian, Morteza, Rashidi, Arman, Aragon, Andrew A., 2017

机译：半极性低效率下垂的解释$（20 \ bar 2 \ bar 1）$ 通过评估载流子复合系数，InGaN / GaN LED

8. Exploiting the Negative Polarization Properties of Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) Heterostructures to Achieve Frequency Doubled Blue-green Lasers with Deep UV (<250 nm) Emission (Year 2). [R] . Reed, M., Readinger, E. D. 2011

机译：利用氮化铟镓（InGaN）/氮化镓（GaN）异质结构的负极化特性实现具有深紫外（<250nm）发射的频率倍增蓝绿激光（2年级）。

1. CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS [P] . 外国专利： US2007257264A1 . 2007-11-08

机译：GaN纳米针的无催化剂生长及其在InGaN / GaN可见光LED中的应用

2. High-efficiency blue InGaN/GaN quantum-well light-emitting diodes with saw-like later [P] . 外国专利： KR101462238B1 . 2014-12-04

机译：高效的蓝色InGaN / GaN量子阱发光二极管，后期呈锯齿状

3. HIGH-EFFICIENCY BLUE INGAN/GAN QUANTUM-WELL LIGHT-EMITTING DIODES WITH SAW-LIKE LATER [P] . 外国专利： KR20140044529A . 2014-04-15

机译：高效的蓝色INGAN / GAN量子阱光发射二极管，具有锯齿状

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The contribution of 3D nanoscale indium fluctuations into the efficiency droop in the green and blue InGaN/GaN LEDs

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