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首页> 外文期刊>Journal of Physics: Conference Series >Plasmadynamic synthesis in the Si-C-N-O system
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Plasmadynamic synthesis in the Si-C-N-O system

机译:Si-C-N-O系统中的等离子体动力学合成

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摘要

The present work is aimed at studying the possibility of synthesizing nanodispersed particles in the Si-C-N-O system and then studying the resulting synthesis products. Three series of experiments were carried out under different atmospheres of the reactor chamber: air, air + argon, argon. The possibility of synthesis of particles of the ternary Si-C-N system was considered. In the course of the study, it was found that, in the air atmosphere of the reactor chamber, the production of silicon carbonitride particles is not feasible due to the oxidation of precursor phases. The result was the production of nanodispersed particles of cubic silicon carbide, which were obtained by the method of plasmadynamic synthesis in a hyper-velocity jet silicon-carbon plasma. The obtained products were subjected to a thermal analysis. During the thermal analysis, the most optimal annealing temperature range was found to be 600-700 °C. Annealing at this temperature in air allows the synthesis product to be eliminated from the unreacted carbon phase.
机译:本工作旨在研究在Si-C-N-O系统中合成纳米分散颗粒的可能性,然后研究所得的合成产物。在反应器室的不同气氛下进行了三个系列的实验:空气,空气+氩气,氩气。考虑了合成三元Si-C-N系统的颗粒的可能性。在研究过程中,发现在反应室的空气气氛中,由于前体相的氧化,碳氮化硅颗粒的生产是不可行的。结果是通过超高速喷射硅碳等离子体中的等离子体动力学合成方法获得了立方纳米碳化硅的纳米分散颗粒。对获得的产物进行热分析。在热分析过程中,发现最佳的退火温度范围是600-700°C。在此温度下在空气中退火可使合成产物从未反应的碳相中除去。

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