Uniformity measurements of large-area indium gallium arsenide and germanium photodetectors

摘要

The properties of six large area semiconductor photodetectors were investigated in the near infrared wavelength range. For potential use as transfer standard detectors in absolute spectral responsivity calibrations, the spatial uniformity and spectral responsivity of four InGaAs and two Ge photodiodes were characterized. Spatial uniformity measurements carried out at 1000 nm, 1550 nm, and 1650 nm show that photodiode spatial non-uniformity changes with wavelength for both InGaAs and Ge detectors. The photodiode characterization apparatus, results, and analysis are presented.