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Growth of Horizontal Nanopillars of CuO on NiO/ITO Surfaces

机译:在NiO / ITO表面上生长CuO水平纳米柱。

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We have demonstrated hydrothermal synthesis of rectangular pillar-like CuO nanostructures at low temperature (~60°C) by selective growth on top of NiO porous structures film deposited using chemical bath deposition method at room temperature using indium tin oxide (ITO) coated glass plate as a substrate. The growth of CuO not only filled the NiO porous structures but also formed the big nanopillarsanowalls on top of NiO surface. These nanopillars could have significant use in nanoelectronics devices or can also be used as p-type conducting wires. The present study is limited to the surface morphology studies of the thin nanostructured layers of NiO/CuO composite materials. Structural, morphological, and absorption measurement of the CuO/NiO heterojunction were studied using state-of-the-art techniques like X-ray diffraction (XRD), transmission electron microscopy (SEM), atomic force microscopy (AFM), and UV spectroscopy. The CuO nanopillarsanowalls have the structure in order of (5 ± 1.0) μm × (2.0 ± 0.3)μm; this will help to provide efficient charge transport in between the different semiconducting layers. The energy band gap of NiO and CuO was also calculated based on UV measurements and discussed.
机译:我们已经证明了通过选择性生长在室温下使用化学浴沉积法沉积的氧化铟锡(ITO)玻璃板上沉积的NiO多孔结构膜之上的选择性生长,可以在低温(〜60°C)下水热合成矩形柱状CuO纳米结构作为基材。 CuO的生长不仅填充了NiO多孔结构,而且在NiO表面顶部形成了大的纳米柱/纳米壁。这些纳米柱可以在纳米电子器件中有重要用途,也可以用作p型导线。本研究仅限于NiO / CuO复合材料纳米结构薄层的表面形貌研究。使用X射线衍射(XRD),透射电子显微镜(SEM),原子力显微镜(AFM)和紫外光谱等最新技术研究了CuO / NiO异质结的结构,形态和吸收率测量。 CuO纳米柱/纳米壁的结构顺序为(5±1.0)μm×(2.0±0.3)μm;这将有助于在不同的半导体层之间提供有效的电荷传输。 NiO和CuO的能带隙也基于紫外测量值进行了计算和讨论。

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