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首页> 外文期刊>The Journal of general physiology >Transfer of ion binding site from ether-à-go-go to Shaker: Mg2+ binds to resting state to modulate channel opening
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Transfer of ion binding site from ether-à-go-go to Shaker: Mg2+ binds to resting state to modulate channel opening

机译:离子结合位点从醚转移到振荡器中的转移:Mg2 +结合到静止状态以调节通道的打开

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In ether-à-go-go (eag) K+ channels, extracellular divalent cations bind to the resting voltage sensor and thereby slow activation. Two eag-specific acidic residues in S2 and S3b coordinate the bound ion. Residues located at analogous positions are ~4 ? apart in the x-ray structure of a Kv1.2/Kv2.1 chimera crystallized in the absence of a membrane potential. It is unknown whether these residues remain in proximity in Kv1 channels at negative voltages when the voltage sensor domain is in its resting conformation. To address this issue, we mutated Shaker residues I287 and F324, which correspond to the binding site residues in eag, to aspartate and recorded ionic and gating currents in the presence and absence of extracellular Mg2+. In I287D+F324D, Mg2+ significantly increased the delay before ionic current activation and slowed channel opening with no readily detectable effect on closing. Because the delay before Shaker opening reflects the initial phase of voltage-dependent activation, the results indicate that Mg2+ binds to the voltage sensor in the resting conformation. Supporting this conclusion, Mg2+ shifted the voltage dependence and slowed the kinetics of gating charge movement. Both the I287D and F324D mutations were required to modulate channel function. In contrast, E283, a highly conserved residue in S2, was not required for Mg2+ binding. Ion binding affected activation by shielding the negatively charged side chains of I287D and F324D. These results show that the engineered divalent cation binding site in Shaker strongly resembles the naturally occurring site in eag. Our data provide a novel, short-range structural constraint for the resting conformation of the Shaker voltage sensor and are valuable for evaluating existing models for the resting state and voltage-dependent conformational changes that occur during activation. Comparing our data to the chimera x-ray structure, we conclude that residues in S2 and S3b remain in proximity throughout voltage-dependent activation.
机译:在“去”(EAG)K +通道中,细胞外二价阳离子与静止电压传感器结合,从而激活缓慢。 S2和S3b中的两个eag特定酸性残基配位结合离子。位于类似位置的残基为〜4?在没有膜电位的情况下结晶的Kv1.2 / Kv2.1嵌合体的X射线结构中分开。当电压传感器域处于其静止构型时,这些残基是否仍以负电压保留在Kv1通道中尚不清楚。为解决此问题,我们在存在和不存在细胞外Mg2 +的情况下,将与eag中的结合位点残基相对应的Shaker残基I287和F324突变为天冬氨酸,并记录其离子和门控电流。在I287D + F324D中,Mg2 +显着增加了离子电流激活之前的延迟,并减慢了通道打开的速度,但对闭合没有明显的影响。因为摇床打开之前的延迟反映了电压依赖性激活的初始阶段,所以结果表明Mg2 +以静止构象结合到电压传感器。支持这一结论的是,Mg2 +改变了电压依赖性并减慢了门控电荷运动的动力学。 I287D和F324D突变都需要调节通道功能。相反,M2 +结合不需要S2中高度保守的残基E283。离子结合通过屏蔽I287D和F324D带负电的侧链来影响激活。这些结果表明,Shaker中工程改造的二价阳离子结合位点与eag中的天然位点非常相似。我们的数据为振荡器电压传感器的静止构象提供了一种新颖的短程结构约束,对于评估激活过程中发生的静止状态和依赖电压的构象变化的现有模型非常有价值。将我们的数据与嵌合体X射线结构进行比较,我们得出结论,在整个电压依赖性激活过程中,S2和S3b中的残基保持邻近。

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