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Metallicity at interphase boundaries due to polar catastrophe induced by charge density discontinuity

机译:电荷密度不连续性引起的极性突变导致相间边界处的金属性

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Tin oxide semiconductors can turn metallic at customized interfaces between two crystal phases, a theoretical study has found. Inspired by recent discoveries of surprisingly conductive regions formed when different insulators are sandwiched together, Udo Schwingenschlögl and two colleagues from KAUST in Saudi Arabia investigated whether similar properties could emerge at phase boundaries inside tin oxide materials. Density functional calculations of tin monoxide-dioxide interfaces indicate that certain polar arrangements generate desirable, high-mobility quantum gases even though the two sides of the boundary have the same formal charge – typically, abrupt charge changes are needed to create two-dimensional metallic states. The team proposed that this unexpected behavior arises from charge density discontinuities due to the mismatched lattices of tin monoxide and dioxide.
机译:理论研究发现,氧化锡半导体可以在两个晶相之间的定制界面处转变金属。受最近发现不同绝缘体夹在一起时形成令人惊讶的导电区域的启发,UdoSchwingenschlögl和沙特阿拉伯KAUST的两位同事研究了类似的特性是否会在氧化锡材料内部的相界出现。一氧化二锡-二氧化锡界面的密度泛函计算表明,即使边界的两侧具有相同的形式电荷,某些极性排列也会生成理想的高迁移率量子气体-通常,需要突然改变电荷才能产生二维金属态。该小组提出,这种意外情况是由于一氧化锡和二氧化锡晶格失配导致电荷密度不连续而引起的。

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