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Development of the Heating Scenarios to Achieve High-Ion Temperature Plasma in the Large Helical Device

机译:在大型螺旋装置中实现高离子温度等离子体的加热方案的发展

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High-ion temperature experiments in the Large Helical Device (LHD) are categorized in terms of the heating scenarios that are closely related to the development of neutral beam injection (NBI) systems. Although high-energy tangential negative-NBI heating has greatly contributed to extending the plasma parameter regime in LHD, the ion temperature does not increase because the electron heating is dominant with negative-NBIs. In the high- Z discharges, it was demonstrated that the ion temperature increased with an increasing ion heating power and achieved 13.5 keV with the negative-NBIs. Low-energy perpendicular positive-NBIs were installed for the ion heating, and the ion temperature was increased to more than 7 keV in hydrogen discharges. In the high-ion temperature plasmas, an ion internal transport barrier (ion ITB) was formed, and the impurity hole was observed in the core. Long-pulse ion cyclotron range of frequency heating (ICH)/electron cyclotron resonance heating (ECRH) helium discharges are effective for wall conditioning, leading to a decrease in the neutral density and a peaked density profile. Consequently, the ion heating efficiency increases in the core, and the central T i is raised up to 7.5 keV. With the superposition of high-power ECRH, high-performance plasmas of T i ~ T e ~ 6 keV were obtained. In the planned deuterium experiment, the ion heating power will be increased with the deuterium beam injection, and T i = 10 keV is expected.
机译:大型螺旋装置(LHD)中的高离子温度实验是根据与中性束注入(NBI)系统的开发密切相关的加热方案进行分类的。尽管高能正切负NBI加热极大地有助于扩展了LHD中的等离子体参数范围,但离子温度并未升高,因为电子加热主要是负NBI。在高Z放电中,已证明离子温度随离子加热功率的增加而升高,并通过负NBI达到13.5 keV。安装了低能量垂直正NBI进行离子加热,在氢放电中离子温度升高到7 keV以上。在高离子温度等离子体中,形成了离子内部传输势垒(离子ITB),并且在芯中观察到了杂质孔。高频加热(IC​​H)/电子回旋共振加热(ECRH)氦放电的长脉冲离子回旋加速器范围可有效地进行壁调节,从而降低中性密度和峰值密度分布。因此,芯部中的离子加热效率提高,并且中心T i 升高至7.5 keV。通过大功率ECRH的叠加,获得了T i 〜T e 〜6 keV的高性能等离子体。在计划的氘实验中,随着氘束注入,离子加热功率将增加,并且预计T i = 10 keV。

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