Object:Vertical Hall-effect devices (VHalls) and split-drain MAG-FETs often have three contacts and a single mirror symmetry. We discuss the Equivalent Resistor Circuit (ERC) at small magnetic field, relate it to the electrical degrees of freedom, and compare it to traditional Hall plates with four contacts.Methods:In contrast to devices with four contacts, it is not possible to determine the sheet resistance of devices with three contacts by electrical measurements like the one of van der Pauw. However, for both types of devices, the output voltage over input current depends only on resistances of the ERC, the sheet resistance, and the Hall angle, irrespective of the exact shape of the devices and the size of the contacts.Result:This allows one to explore the maximum Signal-to-Noise Ratio (SNR) in a very general sense without consideration of any specific device geometry. It is shown how VHalls with all three contacts on the top face of the Hall tub can have electrical symmetry with maximum SNR.
展开▼
机译：对象：垂直霍尔效应器件（VHalls）和分流MAG-FET通常具有三个触点和单个镜像对称性。我们讨论了在小磁场下的等效电阻电路（ERC），将其与电自由度相关联，并将其与具有四个触点的传统霍尔板进行比较。方法：与具有四个触点的器件相比，无法确定通过电气测量（例如van der Pauw之一）测量具有三个触点的设备的薄层电阻。但是，对于这两种类型的设备，无论设备的确切形状和触点尺寸如何，输入电流上的输出电压仅取决于ERC的电阻，薄层电阻和霍尔角。在不考虑任何特定设备几何形状的情况下，从非常普遍的角度探讨最大信噪比（SNR）。它显示了在霍尔浴盆顶面上具有所有三个触点的VHall如何具有最大SNR的电对称性。
展开▼
