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Inhomogeneous spectrum broadening in Nd3+:LuxY1-xVO4 series crystals and consequences on mode-locking laser operation

机译:Nd 3 + :Lu x Y 1-x VO 4 系列晶体的光谱不均匀加宽及其对模态的影响锁激光操作

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Homogeneous spectrum broadening caused by temperature increasing and inhomogeneous broadening caused by ions random replacement in Nd3+-doped LuxY1-xVO4 (x = 0, 0.26, 0.41, 0.61, 0.8 and 1) series crystals were investigated. The results revealed that random replacement had greatest influence on the Nd:Lu0.61Y0.39VO4 crystal which showed the widest inhomogeneous spectrum broadening among these crystals. With a semiconductor saturable absorber mirror (SESAM), the passively mode-locking of this series crystals was carried out under the same condition. The shortest pulse was obtained also by the Nd:Lu0.61Y0.39VO4 crystal, which indirectly manifested the widest line-width of this proportion and its excellent properties for pulse laser applications.
机译:研究了掺杂Nd3 +的LuxY1-xVO4(x = 0、0.26、0.41、0.61、0.8和1)系列晶体中温度升高引起的均匀光谱展宽和离子随机置换引起的非均匀展宽。结果表明,随机置换对Nd:Lu0.61Y0.39VO4晶体的影响最大,Nd:Lu0.61Y0.39VO4晶体在这些晶体中具有最宽的非均匀光谱展宽。使用半导体可饱和吸收镜(SESAM),在相同条件下对该系列晶体进行被动锁模。 Nd:Lu0.61Y0.39VO4晶体也获得了最短的脉冲,该晶体间接表明了该比例的最宽线宽及其在脉冲激光应用中的优异性能。

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