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A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

机译:能带隙工程对CdTe薄膜太阳能电池性能提升的计算研究

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Highlights ? Photovoltaic properties of CdTe solar cell with the structure of (n-SnO2-CdS/p-CdTe/p-CdTe:Te/metal) have been studied by numerical simulation software named AMPS-1D. ? A modified structure has been proposed with the insertion of a back contact buffer layer (CdTe:Te) barrier that will reduce the copper diffusion in CdTe solar cell. ? Four estimated energy bandgap relations versus the Tellurium (Te) concentrations as well as the (CdTe:Te) layer thickness have been examined systematically in simulation. ? Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Abstract In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO 2 -CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D). A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te). This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te) concentrations and the (CdTe:Te) layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established.
机译:强调 ?通过名为AMPS-1D的数值模拟软件研究了具有(n-SnO2 / n-CdS / p-CdTe / p-CdTe:Te / metal)结构的CdTe太阳能电池的光伏性能。 ?已经提出了一种修改的结构,其中插入了背接触缓冲层(CdTe:Te)势垒,它将减少CdTe太阳能电池中的铜扩散。 ?在仿真中系统地检查了四个估计的能带隙关系与碲(Te)浓度以及(CdTe:Te)层厚度的关系。 ?也已经建立了能带隙与CdTe薄膜太阳能电池性能之间的相关性。摘要利用数值模拟软件“微电子和光子结构分析”研究了n-SnO 2 / n-CdS / p-CdTe / p-CdTe:Te /金属构型下CdTe薄膜的光电性能。 ”(AMPS-1D)。通过数值分析,通过插入背接触缓冲层(CdTe:Te),提出了一种用于CdTe薄膜太阳能电池的改进结构。该层可以用作阻挡层,从而减缓CdTe太阳能电池中铜的扩散。在模拟过程中,已经彻底检查了四个估计的能带隙关系与碲(Te)浓度和(CdTe:Te)层厚度的关系。还建立了能带隙与CdTe薄膜太阳能电池性能之间的相关性。

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