...
首页> 外文期刊>Reviews on Advanced Materials Science >Dislocation Climb in Nanocrystalline Materials under High-Strain-Rate Superplastic Deformation
【24h】

Dislocation Climb in Nanocrystalline Materials under High-Strain-Rate Superplastic Deformation

机译:高应变速率超塑性变形下纳米晶材料的位错爬升

获取原文

摘要

A theoretical model is suggested which describes the role of grain boundary dislocation climb in high-strain-rate superplastic deformation of nanocrystalline materials. In the framework of the model, grain boundary sliding causes the dislocation storage at triple junctions of grain boundaries in nanocrystalline materials under superplastic deformation. This effect is responsible for strengthening. The dislocation climb along grain boundaries adjacent to dislocated triple junctions provides relaxation of the dislocation charge accumulated at the triple junctions. As a corollary, the grain boundary dislocation climb hampers the nanocrack generation and gives rise to softening of nanocrystalline materials under superplastic deformation.
机译:提出了一个理论模型,该模型描述了晶界位错爬升在纳米晶材料的高应变速率超塑性变形中的作用。在该模型的框架内,晶界滑动导致超塑性变形下纳米晶材料中晶界的三重结处的位错存储。这种效果负责加强。沿着与位错三重结相邻的晶界的位错爬升提供了在三重结处积累的位错电荷的弛豫。结果,晶界位错爬升阻碍了纳米裂纹的产生,并在超塑性变形下引起纳米晶体材料的软化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号