Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode

摘要

To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO~(2) thin films under the ultraviolet ( λ ?=?400?nm) and red-light ( λ ?=?770?nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO~(2) RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO~(2) RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.