Enhanced Performance of Planar Perovskite Solar Cells Using Low-Temperature Solution-Processed Al-Doped SnO2 as Electron Transport Layers

摘要

Lead halide perovskite solar cells (PSCs) appear to be the ideal future candidate for photovoltaic applications owing to the rapid development in recent years. The electron transport layers (ETLs) prepared by low-temperature process are essential for widespread implementation and large-scale commercialization of PSCs. Here, we report an effective approach for producing planar PSCs with Al_(3+) doped SnO~(2) ETLs prepared by using a low-temperature solution-processed method. The Al dopant in SnO~(2) enhanced the charge transport behavior of planar PSCs and increased the current density of the devices, compared with the undoped SnO~(2) ETLs. Moreover, the enhanced electrical property also improved the fill factors (FF) and power conversion efficiency (PCE) of the solar cells. This study has indicated that the low-temperature solution-processed Al-SnO~(2) is a promising ETL for commercialization of planar PSCs.