Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

摘要

InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5?×?10~(3) A?W~(?1) and external quantum efficiency of 5.04?×?10~(5)?%. This photodetector may have potential applications in integrated optoelectronic devices and systems.