首页> 外文期刊>Mathematical Problems in Engineering: Theory, Methods and Applications >On the Creation of a Stable Drop-Like Static Meniscus, Appropriate for the Growth of a Single Crystal Tube with Prior Specified Inner and Outer Radii
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On the Creation of a Stable Drop-Like Static Meniscus, Appropriate for the Growth of a Single Crystal Tube with Prior Specified Inner and Outer Radii

机译:关于创建稳定的滴状静态弯月面的方法,该方法适合于事先指定内外半径的单晶管的生长

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A theoretical procedure for the creation of a stable drop-like static meniscus, appropriate for the growth of a single crystal tube, with a priori specified inner and outer radius, is presented. The method locates the controllable partpof the pressure difference across the free surface. It consists in a set of calculus, which leads to the determination of the melt column height (between the horizontal crucible melt level and the shaper top level) in function of the pressure of the gas flow (introduced in the furnace for release the heat) in order to obtain the desired meniscus. The procedure is presented in general and is numerically illustrated for InSb tubes. The novelty is the algorithm for the exact determination ofp, which has to be used, the determination of the melt column height, and the evaluation of the effect of shaper radii. The setting of the thermal conditions, which assure that for the obtained static meniscus the solidification conditions are satisfied at the “right” places, is not considered here.
机译:提出了一种理论上的程序,该程序用于创建稳定的滴状静态弯月面,该弯月面适用于具有事先指定的内半径和外半径的单晶管的生长。该方法在整个自由表面上找到压力差的可控制部分。它由一组演算组成,可以根据气流的压力(引入炉中以释放热量)确定熔体塔的高度(在水平坩埚熔体液位和成型机顶部液位之间)。为了获得所需的弯液面。大致介绍了该过程,并用数字对InSb管进行了说明。新颖之处在于必须使用精确确定p的算法,确定熔体柱高度以及评估成形半径的算法。在此不考虑热条件的设置,该条件确保对于获得的静态弯月面,在“正确”位置满足固化条件。

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