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Cu-Doped ZnO Electronic Structure and Optical Properties Studied by First-Principles Calculations and Experiments

机译:铜掺杂ZnO的电子结构和光学性质的第一性原理计算与实验研究

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The band structure, the density of states and optical absorption properties of Cu-doped ZnO were studied by the first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory. For the Zn 1- x Cu x O ( x = 0, x = 0.0278, x = 0.0417) original structure, geometric optimization and energy calculations were performed and compared with experimental results. With increasing Cu concentration, the band gap of the Zn 1 - x Cu x O decreased due to the shift of the conduction band. Since the impurity level was introduced after Cu doping, the conduction band was moved downwards. Additionally, it was shown that the insertion of a Cu atom leads to a red shift of the optical absorption edge, which was consistent with the experimental results.
机译:利用基于密度泛函理论的第一性原理广义梯度近似平面波伪势方法研究了Cu掺杂ZnO的能带结构,态密度和光吸收性质。对于Zn 1-x Cu x O(x = 0,x = 0.0278,x = 0.0417)原始结构,进行了几何优化和能量计算,并与实验结果进行了比较。随着Cu浓度的增加,Zn 1 -x Cu x O的带隙由于导带的移动而减小。由于在掺杂铜之后引入了杂质能级,所以导带向下移动。另外,表明Cu原子的插入导致光吸收边缘的红移,这与实验结果一致。

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