Quantitative and Controllable Growth of Carbon Nanotubes on Silicon Carbide Particles Via Chemical Vapor Deposition

摘要

Carbon nanotube (CNT) and silicon carbide particles (SiCp) can work together as a double-scale hybrid reinforcement for new metal matrix composites. In this paper, nano nickel (Ni) particle catalyst was precipitated by carbamide to achieve uniform dispersion on micron SiCp. And then a CNT-covered SiCp hybrid was synthesized by a conventional Chemical Vapor Deposition (CVD) method. We found that the content of Ni catalyst has great effects on the size and production of CNT. The yield of CNT reached 20.73 wt.% with 5.0 wt.% Ni under the condition of 923 K and 1 h for CVD process. The diameter and average length of the as-grown CNT are 20～30 nm and 3 μm, respectively. Meantime, the chemistry during the controllable growth of CNT was analyzed on the basis of experimental results.