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首页> 外文期刊>International Journal of Innovative Research in Science, Engineering and Technology >Study and Implementation of Gain Boost Class-C Inverter in CMOS 50nm Technology
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Study and Implementation of Gain Boost Class-C Inverter in CMOS 50nm Technology

机译:CMOS 50nm技术中增益升压C类反相器的研究与实现

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摘要

This paper describes the Gain boost class–C inverter circuit, which is used in place of OTA (Operational Transconductance Amplifier) block in ΣΔ modulator .The gain boost class-C inverter behaves as a low voltage, subthreshold amplifier and boosts its DC gain for the high precision requirement. First a traditional cascade class-C inverter is presented, another inverter circuit present in this paper is “Gain boost class-C inverter”. It is implemented in 50nm CMOS technology and simulation is done using the LTSpice simulation tool.
机译:本文介绍了增益升压C类逆变器电路,该电路用于代替ΣΔ调制器中的OTA(运算跨导放大器)模块。增益升压C类逆变器的作用就像一个低压亚阈值放大器,并提高了其直流增益。高精度要求。首先介绍了传统的C级串联逆变器,本文介绍的另一个逆变器电路是“增益升压C级逆变器”。它以50nm CMOS技术实现,并使用LTSpice仿真工具进行了仿真。

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