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Characterization of Hybrid Composites of Nano YAG:Ce-CdSe/ZnS Quantum Dots and Conjugate Polymer Used for Solid State Lighting

机译:纳米YAG:Ce-CdSe / ZnS量子点和共轭聚合物用于固态照明的杂化复合材料的表征

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White light was obtained by mixing blue light from emission of Indium Gallium Nitride (InGaN) chip and green-yellow-red light form the fluorescence of nano-Y3Al5O12:Ce (YAG:Ce), CdSe/ZnS quantum dots (QDs) and Poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) polymer hybrid composite. The hybrid composite was coated on InGaN chip by way similar to slurry method. To achieve an efficient white light emitting diode (WLED) it is necessary to obtain a hybrid composite as homogeneous as possible and with excellent thickness uniformity. The used QDs have core-shell structure with thirteen ZnS monolayer. The properties of YAG:Ce, CdSe/ZnS QDs and MEH-PPV polymer hybrid composite prepared by slurry method were examined using photoluminescence. In this paper, the WLED fabricated by coating the hybrid composite was examined by PMS-50(PLUS) UV-VIS-near IR Spectrophotocolorimeter. The chromaticity of WLED depends on the thickness of the hybrid composite layer. The thickness of this layer could be easily controlled by slurry method. The luminous efficiency of WLED was 20.8 (lm/W) with a colour rendering index (CRI) of 75.8 at 200 mA. The WLED exhibited white light with a CIE coordinates of (0.30, 0.35).
机译:通过混合氮化铟镓(InGaN)芯片发射的蓝光和绿-黄-红光形成白光,形成纳米Y3Al5O12:Ce(YAG:Ce),CdSe / ZnS量子点(QDs)和多晶硅的荧光[2-甲氧基-5-(2'-乙基-己氧基)-1,4-亚苯基亚乙烯基](MEH-PPV)聚合物杂化复合材料。通过类似于淤浆法的方式将杂化复合物涂覆在InGaN芯片上。为了获得有效的白光发光二极管(WLED),必须获得尽可能均匀且具有优异的厚度均匀性的混合复合材料。所使用的量子点具有核壳结构,具有13个ZnS单层。用光致发光法研究了用淤浆法制备的YAG:Ce,CdSe / ZnS QDs和MEH-PPV聚合物杂化复合材料的性能。在本文中,通过PMS-50(PLUS)UV-VIS-近红外分光光度计检查了通过涂覆混合复合材料制成的WLED。 WLED的色度取决于混合复合层的厚度。该层的厚度可以通过淤浆法容易地控制。在200 mA时,WLED的发光效率为20.8(lm / W),显色指数(CRI)为75.8。 WLED呈现CIE坐标为(0.30,0.35)的白光。

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